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Si4490DY

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The Si4490DY from Vishay is a MOSFET with Continous Drain Current 4 A, Drain Source Resistance 65 to 90 milliohm, Drain Source Breakdown Voltage 200 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 V. Tags: Surface Mount. More details for Si4490DY can be seen below.

Product Specifications

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Product Details

  • Part Number
    Si4490DY
  • Manufacturer
    Vishay
  • Description
    200 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    4 A
  • Drain Source Resistance
    65 to 90 milliohm
  • Drain Source Breakdown Voltage
    200 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 V
  • Gate Charge
    34 nC
  • Power Dissipation
    3.1 W
  • Temperature operating range
    -55 to 150 ºC
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SO-8

Technical Documents
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