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Si4909DY

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The Si4909DY from Vishay is a MOSFET with Continous Drain Current -8 A, Drain Source Resistance 21 to 34 milliohm, Drain Source Breakdown Voltage -40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -1.2 to 2.5 V. Tags: Surface Mount. More details for Si4909DY can be seen below.

Product Specifications

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Product Details

  • Part Number
    Si4909DY
  • Manufacturer
    Vishay
  • Description
    40 V, P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -8 A
  • Drain Source Resistance
    21 to 34 milliohm
  • Drain Source Breakdown Voltage
    -40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -1.2 to 2.5 V
  • Gate Charge
    41.5 nC
  • Power Dissipation
    3.2 W
  • Temperature operating range
    -55 to 150 ºC
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SO-8
  • Applications
    Load switches - Notebook PCs - Desktop PCs

Technical Documents
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