Si5419DU

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Si5419DU Image

The Si5419DU from Vishay is a MOSFET with Continous Drain Current 12 A, Drain Source Resistance 16 to 33 Milliohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -2.5 to -1.2 V. Tags: Surface Mount. More details for Si5419DU can be seen below.

Product Specifications

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Product Details

  • Part Number
    Si5419DU
  • Manufacturer
    Vishay
  • Description
    -20 to 20 V, Single, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    12 A
  • Drain Source Resistance
    16 to 33 Milliohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -2.5 to -1.2 V
  • Gate Charge
    30 nC
  • Power Dissipation
    31 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerPAK ChipFET
  • Applications
    Load Switch

Technical Documents

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