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Si5429DU

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Si5429DU Image

The Si5429DU from Vishay is a MOSFET with Continous Drain Current -12 A, Drain Source Resistance 12.2 to 22 Milliohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -2.2 to -1 V. Tags: Surface Mount. More details for Si5429DU can be seen below.

Product Specifications

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Product Details

  • Part Number
    Si5429DU
  • Manufacturer
    Vishay
  • Description
    -20 to 20 V, Single, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -12 A
  • Drain Source Resistance
    12.2 to 22 Milliohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -2.2 to -1 V
  • Gate Charge
    42 nC
  • Power Dissipation
    31 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerPAK ChipFET
  • Applications
    Power management for mobile computing - Adaptor switch - Load switch - DC/DC converter

Technical Documents
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