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Si5515CDC

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Si5515CDC Image

The Si5515CDC from Vishay is a MOSFET with Continous Drain Current 4 A, Drain Source Resistance 30 to 156 Milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -0.8 to 0.8 V. Tags: Surface Mount. More details for Si5515CDC can be seen below.

Product Specifications

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Product Details

  • Part Number
    Si5515CDC
  • Manufacturer
    Vishay
  • Description
    -8 to 8 V, Dual, N-Channel, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode, P-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel, P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    4 A
  • Drain Source Resistance
    30 to 156 Milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    -0.8 to 0.8 V
  • Gate Charge
    6.2 to 11.3 nC
  • Power Dissipation
    3.1 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    1206-8 ChipFET
  • Applications
    Load Switch for Portable Devices

Technical Documents
View details on the manufacturer's website
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