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Si5517DU

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The Si5517DU from Vishay is a MOSFET with Continous Drain Current 6 A, Drain Source Resistance 32 to 131 Milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -1 to 1 V. Tags: Surface Mount. More details for Si5517DU can be seen below.

Product Specifications

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Product Details

  • Part Number
    Si5517DU
  • Manufacturer
    Vishay
  • Description
    -8 to 8 V, Dual, N-Channel, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode, P-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel, P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    6 A
  • Drain Source Resistance
    32 to 131 Milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    -1 to 1 V
  • Gate Charge
    6 to 16 nC
  • Power Dissipation
    8.3 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerPAK ChipFET
  • Applications
    Complementary MOSFET for portable devices - Ideal for buck-boost circuits

Technical Documents
View details on the manufacturer's website
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