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Si5902BDC

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Si5902BDC Image

The Si5902BDC from Vishay is a MOSFET with Continous Drain Current 4 A, Drain Source Resistance 53 to 100 Milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.5 to 3 V. Tags: Surface Mount. More details for Si5902BDC can be seen below.

Product Specifications

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Product Details

  • Part Number
    Si5902BDC
  • Manufacturer
    Vishay
  • Description
    -20 to 20 V, Dual, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    4 A
  • Drain Source Resistance
    53 to 100 Milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.5 to 3 V
  • Gate Charge
    2 to 4.5 nC
  • Power Dissipation
    3.12 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    1206-8 ChipFET
  • Applications
    Load Switch for Portable Applications, DC/DC Converter

Technical Documents
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