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Si6562CDQ

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The Si6562CDQ from Vishay is a MOSFET with Continous Drain Current 6.1 A, Drain Source Resistance 18 to 45 Milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage -1.5 to 1.5 V. Tags: Surface Mount. More details for Si6562CDQ can be seen below.

Product Specifications

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Product Details

  • Part Number
    Si6562CDQ
  • Manufacturer
    Vishay
  • Description
    -12 to 12 V, Dual, N-Channel, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode, P-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel, P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    6.1 A
  • Drain Source Resistance
    18 to 45 Milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    -1.5 to 1.5 V
  • Gate Charge
    17 to 34 nC
  • Power Dissipation
    1.7 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TSSOP-8
  • Applications
    Load Switch, DC/DC Converter

Technical Documents
View details on the manufacturer's website
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