Si7111EDN

Note : Your request will be directed to Vishay.

Si7111EDN Image

The Si7111EDN from Vishay is a MOSFET with Continous Drain Current 60 A, Drain Source Resistance 7 to 16 Milliohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage -1.6 to -0.6 V. Tags: Surface Mount. More details for Si7111EDN can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    Si7111EDN
  • Manufacturer
    Vishay
  • Description
    -12 to 12 V, Single, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    60 A
  • Drain Source Resistance
    7 to 16 Milliohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    -1.6 to -0.6 V
  • Gate Charge
    56.5 nC
  • Power Dissipation
    52 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerPAK 1212-8
  • Applications
    Battery switch, Adapter and charger switch, Load switch, Battery management in mobile devices

Technical Documents

Latest MOSFETs

View more products