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Si7119DN

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Si7119DN Image

The Si7119DN from Vishay is a MOSFET with Continous Drain Current 3.8 A, Drain Source Resistance 860 to 1100 Milliohm, Drain Source Breakdown Voltage -200 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -4 to -2 V. Tags: Surface Mount. More details for Si7119DN can be seen below.

Product Specifications

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Product Details

  • Part Number
    Si7119DN
  • Manufacturer
    Vishay
  • Description
    -20 to 20 V, Single, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    3.8 A
  • Drain Source Resistance
    860 to 1100 Milliohm
  • Drain Source Breakdown Voltage
    -200 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -4 to -2 V
  • Gate Charge
    10.6 to 16.2 nC
  • Power Dissipation
    52 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerPAK 1212-8
  • Applications
    Active clamp circuits in DC/DC power supplies

Technical Documents
View details on the manufacturer's website
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