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Si7820DN

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Si7820DN Image

The Si7820DN from Vishay is a MOSFET with Continous Drain Current 2.6 A, Drain Source Resistance 200 to 250 Milliohm, Drain Source Breakdown Voltage 200 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for Si7820DN can be seen below.

Product Specifications

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Product Details

  • Part Number
    Si7820DN
  • Manufacturer
    Vishay
  • Description
    200 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    2.6 A
  • Drain Source Resistance
    200 to 250 Milliohm
  • Drain Source Breakdown Voltage
    200 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    12.1 nC
  • Power Dissipation
    3.8 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerPAK 1212-8
  • Applications
    Primary Side Switch - Telecom Power Supplies - Distributed Power Architectures - Miniature Power Modules

Technical Documents
View details on the manufacturer's website
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