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Si7846DP

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Si7846DP Image

The Si7846DP from Vishay is a MOSFET with Continous Drain Current 24.5 A, Drain Source Resistance 41 to 50 Milliohm, Drain Source Breakdown Voltage 150 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4.5 V. Tags: Surface Mount. More details for Si7846DP can be seen below.

Product Specifications

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Product Details

  • Part Number
    Si7846DP
  • Manufacturer
    Vishay
  • Description
    150 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    24.5 A
  • Drain Source Resistance
    41 to 50 Milliohm
  • Drain Source Breakdown Voltage
    150 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4.5 V
  • Gate Charge
    30 nC
  • Power Dissipation
    5.2 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerPAK SO-8
  • Applications
    Primary Side Switch for High Density DC/DC, Telecom/Server 48 V DC/DC, Industrial and 42 V Automotive

Technical Documents
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