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Si7852DP

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Si7852DP Image

The Si7852DP from Vishay is a MOSFET with Continous Drain Current 7.6 A, Drain Source Resistance 13.5 to 22 Milliohm, Drain Source Breakdown Voltage 80 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 V. Tags: Surface Mount. More details for Si7852DP can be seen below.

Product Specifications

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Product Details

  • Part Number
    Si7852DP
  • Manufacturer
    Vishay
  • Description
    80 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    7.6 A
  • Drain Source Resistance
    13.5 to 22 Milliohm
  • Drain Source Breakdown Voltage
    80 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 V
  • Gate Charge
    34 nC
  • Power Dissipation
    1.9 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerPAK SO-8
  • Applications
    Primary side switch for DC/DC applications

Technical Documents
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