Si7942DP

Note : Your request will be directed to Vishay.

The Si7942DP from Vishay is a MOSFET with Continous Drain Current 5.9 A, Drain Source Resistance 41 to 60 Milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for Si7942DP can be seen below.

Product Specifications

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Product Details

Part Number
Si7942DP
Manufacturer
Vishay
Description
100 V, N-Channel MOSFET

General

Types of MOSFET

N-Channel Enhancement Mode
Transistor Polarity

N-Channel
Number of Channels

Dual
Continous Drain Current

5.9 A
Drain Source Resistance

41 to 60 Milliohm
Drain Source Breakdown Voltage

100 V
Gate Source Voltage

-20 to 20 V
Gate Source Threshold Voltage

2 to 4 V
Gate Charge

16 nC
Power Dissipation

3.5 W
Temperature operating range

-55 to 150 Degree C
RoHS Compliant

Yes
Package Type

Surface Mount
Package

PowerPAK SO-8
Applications

Synchronous Buck Shoot-Through Resistant, Optimized for Primary Side Switch