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Si7956DP

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Si7956DP Image

The Si7956DP from Vishay is a MOSFET with Continous Drain Current 4.1 A, Drain Source Resistance 88 to 115 Milliohm, Drain Source Breakdown Voltage 150 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for Si7956DP can be seen below.

Product Specifications

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Product Details

  • Part Number
    Si7956DP
  • Manufacturer
    Vishay
  • Description
    150 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    4.1 A
  • Drain Source Resistance
    88 to 115 Milliohm
  • Drain Source Breakdown Voltage
    150 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    17 nC
  • Power Dissipation
    3.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerPAK SO-8
  • Applications
    High Efficiency Primary Side Switches, Half Bridge and Forward Converters

Technical Documents
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