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Si7997DP

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Si7997DP Image

The Si7997DP from Vishay is a MOSFET with Continous Drain Current -60 A, Drain Source Resistance 4.5 to 7.8 Milliohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -2.2 to -1 V. Tags: Surface Mount. More details for Si7997DP can be seen below.

Product Specifications

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Product Details

  • Part Number
    Si7997DP
  • Manufacturer
    Vishay
  • Description
    -30 V, P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -60 A
  • Drain Source Resistance
    4.5 to 7.8 Milliohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -2.2 to -1 V
  • Gate Charge
    51 to 106 nC
  • Power Dissipation
    46 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerPAK SO-8
  • Applications
    Battery and load switching for notebook PCs

Technical Documents
View details on the manufacturer's website
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