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Si7998DP

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Si7998DP Image

The Si7998DP from Vishay is a MOSFET with Continous Drain Current 30 A, Drain Source Resistance 7.6 to 12.4 Milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.2 to 2.5 V. Tags: Surface Mount. More details for Si7998DP can be seen below.

Product Specifications

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Product Details

  • Part Number
    Si7998DP
  • Manufacturer
    Vishay
  • Description
    30 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    30 A
  • Drain Source Resistance
    7.6 to 12.4 Milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.2 to 2.5 V
  • Gate Charge
    15.3 to 32 nC
  • Power Dissipation
    40 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerPAK SO-8
  • Applications
    System Power DC/DC

Technical Documents
View details on the manufacturer's website
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