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Si8409DB

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Si8409DB Image

The Si8409DB from Vishay is a MOSFET with Continous Drain Current 6.3 A, Drain Source Resistance 38 to 65 Milliohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage -0.6 to 1.4 V. Tags: Surface Mount. More details for Si8409DB can be seen below.

Product Specifications

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Product Details

  • Part Number
    Si8409DB
  • Manufacturer
    Vishay
  • Description
    -30 V, P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    6.3 A
  • Drain Source Resistance
    38 to 65 Milliohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    -0.6 to 1.4 V
  • Gate Charge
    17 nC
  • Power Dissipation
    2.77 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    MICRO FOOT
  • Applications
    Load switch, battery switch, and PA switch for portable devices

Technical Documents
View details on the manufacturer's website
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