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Si8425DB

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Si8425DB Image

The Si8425DB from Vishay is a MOSFET with Continous Drain Current 9.3 A, Drain Source Resistance 18 to 40 Milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -10 to 10 V, Gate Source Threshold Voltage -0.9 to -0.4 V. Tags: Surface Mount. More details for Si8425DB can be seen below.

Product Specifications

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Product Details

  • Part Number
    Si8425DB
  • Manufacturer
    Vishay
  • Description
    -20 V, P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    9.3 A
  • Drain Source Resistance
    18 to 40 Milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -10 to 10 V
  • Gate Source Threshold Voltage
    -0.9 to -0.4 V
  • Gate Charge
    36 to 73 nC
  • Power Dissipation
    2.7 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    MICRO FOOT
  • Applications
    ow on-resistance load switch, charger switch and battery switch for portable devices - Low power consumption - Increased battery life

Technical Documents
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