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Si8466EDB

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The Si8466EDB from Vishay is a MOSFET with Continous Drain Current 5.4 A, Drain Source Resistance 35 to 90 Milliohm, Drain Source Breakdown Voltage 8 V, Gate Source Voltage -5 to 5 V, Gate Source Threshold Voltage 0.35 to 0.7 V. Tags: Surface Mount. More details for Si8466EDB can be seen below.

Product Specifications

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Product Details

  • Part Number
    Si8466EDB
  • Manufacturer
    Vishay
  • Description
    8 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    5.4 A
  • Drain Source Resistance
    35 to 90 Milliohm
  • Drain Source Breakdown Voltage
    8 V
  • Gate Source Voltage
    -5 to 5 V
  • Gate Source Threshold Voltage
    0.35 to 0.7 V
  • Gate Charge
    8.5 nC
  • Power Dissipation
    1.8 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    MICRO FOOT
  • Applications
    Low on-resistance load switch for portable devices - Low power consumption, low voltage drop - Increased battery life - Space savings on PCB

Technical Documents
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