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Si8487DB

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Si8487DB Image

The Si8487DB from Vishay is a MOSFET with Continous Drain Current 7.7 A, Drain Source Resistance 25 to 45 Milliohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage -1.2 to -0.6 V. Tags: Surface Mount. More details for Si8487DB can be seen below.

Product Specifications

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Product Details

  • Part Number
    Si8487DB
  • Manufacturer
    Vishay
  • Description
    -30 V, P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    7.7 A
  • Drain Source Resistance
    25 to 45 Milliohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    -1.2 to -0.6 V
  • Gate Charge
    25 to 52 nC
  • Power Dissipation
    2.7 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    MICRO FOOT
  • Applications
    Mobile computing, smart phones, tablet PCs - Load switch - Battery switch - Charger switch - OVP switch

Technical Documents
View details on the manufacturer's website
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