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Si8489EDB

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The Si8489EDB from Vishay is a MOSFET with Continous Drain Current 5.4 A, Drain Source Resistance 36 to 82 Milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage -1.2 to -0.5 V. Tags: Surface Mount. More details for Si8489EDB can be seen below.

Product Specifications

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Product Details

  • Part Number
    Si8489EDB
  • Manufacturer
    Vishay
  • Description
    -20 V, P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    5.4 A
  • Drain Source Resistance
    36 to 82 Milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    -1.2 to -0.5 V
  • Gate Charge
    8.6 to 17.5 nC
  • Power Dissipation
    1.8 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    MICRO FOOT
  • Applications
    Load switches and charger switches, Battery management, For smart phones and tablet PCs

Technical Documents
View details on the manufacturer's website
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