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Si8499DB

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Si8499DB Image

The Si8499DB from Vishay is a MOSFET with Continous Drain Current 16 A, Drain Source Resistance 26 to 120 Milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage -1.3 to -0.5 V. Tags: Surface Mount. More details for Si8499DB can be seen below.

Product Specifications

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Product Details

  • Part Number
    Si8499DB
  • Manufacturer
    Vishay
  • Description
    -20 V, P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    16 A
  • Drain Source Resistance
    26 to 120 Milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    -1.3 to -0.5 V
  • Gate Charge
    14.5 nC
  • Power Dissipation
    13 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    MICRO FOOT
  • Applications
    Low on-resistance load switch, charger switch and battery switch for portable devices - Low power consumption - Increased battery life

Technical Documents
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