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Si8816EDB

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The Si8816EDB from Vishay is a MOSFET with Continous Drain Current 2.3 A, Drain Source Resistance 87 to 142 Milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.6 to 1.4 V. Tags: Surface Mount. More details for Si8816EDB can be seen below.

Product Specifications

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Product Details

  • Part Number
    Si8816EDB
  • Manufacturer
    Vishay
  • Description
    30 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    2.3 A
  • Drain Source Resistance
    87 to 142 Milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.6 to 1.4 V
  • Gate Charge
    2.4 to 4.4 nC
  • Power Dissipation
    0.9 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    MICRO FOOT
  • Applications
    Load switch, OVP switch, High speed switching, DC/DC converters, For smart phones, tablet PCs, and mobile computing

Technical Documents
View details on the manufacturer's website
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