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Si8819EDB

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Si8819EDB Image

The Si8819EDB from Vishay is a MOSFET with Continous Drain Current -2.9 A, Drain Source Resistance 63 to 280 Milliohm, Drain Source Breakdown Voltage -12 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -0.9 to -0.4 V. Tags: Surface Mount. More details for Si8819EDB can be seen below.

Product Specifications

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Product Details

  • Part Number
    Si8819EDB
  • Manufacturer
    Vishay
  • Description
    -12 V, P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -2.9 A
  • Drain Source Resistance
    63 to 280 Milliohm
  • Drain Source Breakdown Voltage
    -12 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    -0.9 to -0.4 V
  • Gate Charge
    7 nC
  • Power Dissipation
    0.9 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    MICRO FOOT
  • Applications
    Load switch, OVP switch, High speed switching, DC/DC converters, For smart phones, tablet PCs, and mobile computing

Technical Documents
View details on the manufacturer's website
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