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Si8821EDB

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Si8821EDB Image

The Si8821EDB from Vishay is a MOSFET with Continous Drain Current 2.3 A, Drain Source Resistance 105 to 215 Milliohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage -1.3 to -0.6 V. Tags: Surface Mount. More details for Si8821EDB can be seen below.

Product Specifications

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Product Details

  • Part Number
    Si8821EDB
  • Manufacturer
    Vishay
  • Description
    -30 V, P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    2.3 A
  • Drain Source Resistance
    105 to 215 Milliohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    -1.3 to -0.6 V
  • Gate Charge
    5.2 to 11 nC
  • Power Dissipation
    0.9 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    MICRO FOOT
  • Applications
    Load switches and chargers switches, Battery management, power management, DC/DC converters, For smart phones, tablet PCs, and mobile computing

Technical Documents
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