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Si8824EDB

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The Si8824EDB from Vishay is a MOSFET with Continous Drain Current 2.9 A, Drain Source Resistance 60 to 175 Milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -5 to 5 V, Gate Source Threshold Voltage 0.35 to 0.8 V. Tags: Surface Mount. More details for Si8824EDB can be seen below.

Product Specifications

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Product Details

  • Part Number
    Si8824EDB
  • Manufacturer
    Vishay
  • Description
    20 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    2.9 A
  • Drain Source Resistance
    60 to 175 Milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -5 to 5 V
  • Gate Source Threshold Voltage
    0.35 to 0.8 V
  • Gate Charge
    2.7 nC
  • Power Dissipation
    0.9 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    MICRO FOOT
  • Applications
    Ultraportable and wearable devices, Load switch with low voltage drop, Load switch for 1.2 V, 1.5 V, and 1.8 V power lines, Small signal and high speed switching

Technical Documents
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