1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Vishay
  6. SiA4265EDJ

SiA4265EDJ

Download Datasheet Request Quote

Note : Your request will be directed to Vishay.

SiA4265EDJ Image

The SiA4265EDJ from Vishay is a MOSFET with Continous Drain Current -9 A, Drain Source Resistance 26.5 to 67.5 Milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -1 to -0.4 V. Tags: Surface Mount. More details for SiA4265EDJ can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    SiA4265EDJ
  • Manufacturer
    Vishay
  • Description
    -20 V, P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -9 A
  • Drain Source Resistance
    26.5 to 67.5 Milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    -1 to -0.4 V
  • Gate Charge
    13.8 nC
  • Power Dissipation
    15.6 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerPAK SC-70
  • Applications
    Power management for portable and consumer - Load switches - Battery switches - Charger switches

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products