1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Vishay
  6. SiA429DJT

SiA429DJT

Download Datasheet Request Quote

Note : Your request will be directed to Vishay.

SiA429DJT Image

The SiA429DJT from Vishay is a MOSFET with Continous Drain Current -12 A, Drain Source Resistance 17 to 60 Milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -1 to -0.4 V. Tags: Surface Mount. More details for SiA429DJT can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    SiA429DJT
  • Manufacturer
    Vishay
  • Description
    -20 V, P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -12 A
  • Drain Source Resistance
    17 to 60 Milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    -1 to -0.4 V
  • Gate Charge
    24.5 nC
  • Power Dissipation
    19 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    Thin PowerPAK SC-70
  • Applications
    Load switch and charger switch for portable devices, DC/DC converter

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products