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SiA433EDJ

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The SiA433EDJ from Vishay is a MOSFET with Continous Drain Current -12 A, Drain Source Resistance 15 to 65 Milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage -1.2 to -0.5 V. Tags: Surface Mount. More details for SiA433EDJ can be seen below.

Product Specifications

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Product Details

  • Part Number
    SiA433EDJ
  • Manufacturer
    Vishay
  • Description
    -20 V, P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -12 A
  • Drain Source Resistance
    15 to 65 Milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    -1.2 to -0.5 V
  • Gate Charge
    20 nC
  • Power Dissipation
    19 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerPAK SC-70
  • Applications
    Portable devices - Load switch - Battery switch - Charger switch

Technical Documents
View details on the manufacturer's website
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