1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Vishay
  6. SiA445EDJT

SiA445EDJT

Download Datasheet Request Quote

Note : Your request will be directed to Vishay.

SiA445EDJT Image

The SiA445EDJT from Vishay is a MOSFET with Continous Drain Current 12 A, Drain Source Resistance 13.8 to 31 Milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage -1.2 to -0.5 V. Tags: Surface Mount. More details for SiA445EDJT can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    SiA445EDJT
  • Manufacturer
    Vishay
  • Description
    -20 V, P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    12 A
  • Drain Source Resistance
    13.8 to 31 Milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    -1.2 to -0.5 V
  • Gate Charge
    22 to 46 nC
  • Power Dissipation
    19 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    Thin PowerPAK SC-70
  • Applications
    Smart phones, tablet PCs, mobile computing - Battery switch - Charger switch - Load switch

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products