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SiA477EDJT

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The SiA477EDJT from Vishay is a MOSFET with Continous Drain Current -12 A, Drain Source Resistance 11 to 32 Milliohm, Drain Source Breakdown Voltage -12 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -1 to -0.4 V. Tags: Surface Mount. More details for SiA477EDJT can be seen below.

Product Specifications

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Product Details

  • Part Number
    SiA477EDJT
  • Manufacturer
    Vishay
  • Description
    -12 V, P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -12 A
  • Drain Source Resistance
    11 to 32 Milliohm
  • Drain Source Breakdown Voltage
    -12 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    -1 to -0.4 V
  • Gate Charge
    33 to 55 nC
  • Power Dissipation
    19 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    Thin PowerPAK SC-70-6L
  • Applications
    Smart phones, tablet PCs, mobile computing - Battery switch - Charger switch - Load switch

Technical Documents
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