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SiA533EDJ

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The SiA533EDJ from Vishay is a MOSFET with Continous Drain Current 4.5 A, Drain Source Resistance 28 to 215 Milliohm, Drain Source Breakdown Voltage -12 to 12 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -1 to 1 V. Tags: Surface Mount. More details for SiA533EDJ can be seen below.

Product Specifications

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Product Details

  • Part Number
    SiA533EDJ
  • Manufacturer
    Vishay
  • Description
    -8 to 8 V, 7.8 W, N-Channel, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode, P-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel, P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    4.5 A
  • Drain Source Resistance
    28 to 215 Milliohm
  • Drain Source Breakdown Voltage
    -12 to 12 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    -1 to 1 V
  • Gate Charge
    5.6 to 20 V nC
  • Power Dissipation
    7.8 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerPAK SC-70
  • Applications
    Load switch for portable devices, DC/DC converters

Technical Documents
View details on the manufacturer's website
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