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SiA817EDJ

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The SiA817EDJ from Vishay is a MOSFET with Continous Drain Current -4.5 A, Drain Source Resistance 54 to 125 Milliohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage -1.3 to -0.6 V. Tags: Surface Mount. More details for SiA817EDJ can be seen below.

Product Specifications

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Product Details

  • Part Number
    SiA817EDJ
  • Manufacturer
    Vishay
  • Description
    -12 to 12 V, 6.5 W, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -4.5 A
  • Drain Source Resistance
    54 to 125 Milliohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    -1.3 to -0.6 V
  • Gate Charge
    6.6 to 23 nC
  • Power Dissipation
    6.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerPAK SC-70
  • Applications
    Portable devices such as smart phones, tablet PCs, and mobile computing - Battery charger switch - Buck converter - Power management

Technical Documents
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