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SiA918EDJ

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The SiA918EDJ from Vishay is a MOSFET with Continous Drain Current 4.5 A, Drain Source Resistance 46 to 77 Milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage 0.4 to 0.9 V. Tags: Surface Mount. More details for SiA918EDJ can be seen below.

Product Specifications

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Product Details

  • Part Number
    SiA918EDJ
  • Manufacturer
    Vishay
  • Description
    -8 to 8 V, 7.8 W, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    4.5 A
  • Drain Source Resistance
    46 to 77 Milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    0.4 to 0.9 V
  • Gate Charge
    3.6 to 9.5 nC
  • Power Dissipation
    7.8 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerPAK SC-70
  • Applications
    Portable devices such as smart phones, tablet PCs and mobile computing - Load switch - DC/DC converter - Power management

Technical Documents
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