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SiB912DK

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SiB912DK Image

The SiB912DK from Vishay is a MOSFET with Continous Drain Current 1.5 A, Drain Source Resistance 180 to 375 Milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage 0.4 to 1 V. Tags: Surface Mount. More details for SiB912DK can be seen below.

Product Specifications

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Product Details

  • Part Number
    SiB912DK
  • Manufacturer
    Vishay
  • Description
    -8 to 8 V, 3.1 W, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    1.5 A
  • Drain Source Resistance
    180 to 375 Milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    0.4 to 1 V
  • Gate Charge
    1.2 nC
  • Power Dissipation
    3.1 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerPAK SC-75
  • Applications
    Load switch, PA switch, and battery switch for portable devices, DC/DC converter

Technical Documents
View details on the manufacturer's website
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