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SiDR500EP

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SiDR500EP Image

The SiDR500EP from Vishay is a MOSFET with Continous Drain Current 421 A, Drain Source Resistance 0.39 to 0.68 Milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -16 to 16 V, Gate Source Threshold Voltage 1 to 2.2 V. Tags: Surface Mount. More details for SiDR500EP can be seen below.

Product Specifications

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Product Details

  • Part Number
    SiDR500EP
  • Manufacturer
    Vishay
  • Description
    -16 to 16 V, 150 W, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    421 A
  • Drain Source Resistance
    0.39 to 0.68 Milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -16 to 16 V
  • Gate Source Threshold Voltage
    1 to 2.2 V
  • Gate Charge
    54.3 to 120 nC
  • Power Dissipation
    150 W
  • Temperature operating range
    -55 to 175 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerPAK SO-8DC
  • Applications
    DC/DC converter, POL, Synchronous rectification, Power and load switch, Battery management

Technical Documents
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