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SiE882DF

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SiE882DF Image

The SiE882DF from Vishay is a MOSFET with Continous Drain Current 60 A, Drain Source Resistance 1.1 to 1.8 Milliohm, Drain Source Breakdown Voltage 25 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2.2 V. Tags: Surface Mount. More details for SiE882DF can be seen below.

Product Specifications

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Product Details

  • Part Number
    SiE882DF
  • Manufacturer
    Vishay
  • Description
    -20 to 20 V, 125 W, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    60 A
  • Drain Source Resistance
    1.1 to 1.8 Milliohm
  • Drain Source Breakdown Voltage
    25 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 2.2 V
  • Gate Charge
    46 to 96 nC
  • Power Dissipation
    125 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PolarPAK
  • Applications
    VRM, DC/DC conversion

Technical Documents
View details on the manufacturer's website
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