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SiHA15N50E

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The SiHA15N50E from Vishay is a MOSFET with Continous Drain Current 14.5 A, Drain Source Resistance 243 to 280 Milliohm, Drain Source Breakdown Voltage 500 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for SiHA15N50E can be seen below.

Product Specifications

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Product Details

  • Part Number
    SiHA15N50E
  • Manufacturer
    Vishay
  • Description
    -30 to 30 V, 33 W, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    14.5 A
  • Drain Source Resistance
    243 to 280 Milliohm
  • Drain Source Breakdown Voltage
    500 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    33 nC
  • Power Dissipation
    33 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    Thin-Lead TO-220 FULLPAK
  • Applications
    Computing - PC silver box / ATX power supplies, Lighting - Two stage LED lighting, Consumer electronics, Applications using hard switched topologies - Power factor correction (PFC) - Two switch forward converter - Flyback converter, Switch mode power supp

Technical Documents
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