1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Vishay
  6. SiHB12N60E

SiHB12N60E

Download Datasheet Request Quote

Note : Your request will be directed to Vishay.

SiHB12N60E Image

The SiHB12N60E from Vishay is a MOSFET with Continous Drain Current 12 A, Drain Source Resistance 320 to 380 Milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for SiHB12N60E can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    SiHB12N60E
  • Manufacturer
    Vishay
  • Description
    -30 to 30 V, 29 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    12 A
  • Drain Source Resistance
    320 to 380 Milliohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    29 nC
  • Power Dissipation
    147 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    D2PAK (TO-263)
  • Applications
    Server and telecom power supplies, Switch mode power supplies (SMPS), Power factor correction power supplies (PFC), Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting, Industrial - Welding - Motor drives - Battery chargers - Solar (P

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products