The SiHB12N65E from Vishay is a MOSFET with Continous Drain Current 12 A, Drain Source Resistance 330 to 380 Milliohm, Drain Source Breakdown Voltage 650 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for SiHB12N65E can be seen below.