1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Vishay
  6. SiHB21N80AE

SiHB21N80AE

Download Datasheet Request Quote

Note : Your request will be directed to Vishay.

SiHB21N80AE Image

The SiHB21N80AE from Vishay is a MOSFET with Continous Drain Current 17.4 A, Drain Source Resistance 205 to 235 Milliohm, Drain Source Breakdown Voltage 800 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for SiHB21N80AE can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    SiHB21N80AE
  • Manufacturer
    Vishay
  • Description
    -30 to 30 V, 48 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    17.4 A
  • Drain Source Resistance
    205 to 235 Milliohm
  • Drain Source Breakdown Voltage
    800 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    48 nC
  • Power Dissipation
    179 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    D2PAK (TO-263)
  • Applications
    Server and telecom power supplies, Switch mode power supplies (SMPS), Power factor correction power supplies (PFC), Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting, Industrial - Welding - Motor drives - Battery chargers - Solar (P

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products