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SiHB35N60EF

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The SiHB35N60EF from Vishay is a MOSFET with Continous Drain Current 32 A, Drain Source Resistance 84 to 97 Milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for SiHB35N60EF can be seen below.

Product Specifications

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Product Details

  • Part Number
    SiHB35N60EF
  • Manufacturer
    Vishay
  • Description
    -30 to 30 V, 89 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    32 A
  • Drain Source Resistance
    84 to 97 Milliohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    89 nC
  • Power Dissipation
    250 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    D2PAK (TO-263)
  • Applications
    Server and telecom power supplies, Switch mode power supplies (SMPS), Power factor correction power supplies (PFC), Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting, Industrial - Welding - Motor drives - Battery chargers - Solar (P

Technical Documents
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