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SiHB4N80E

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SiHB4N80E Image

The SiHB4N80E from Vishay is a MOSFET with Continous Drain Current 4.3 A, Drain Source Resistance 1100 to 1270 Milliohm, Drain Source Breakdown Voltage 800 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for SiHB4N80E can be seen below.

Product Specifications

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Product Details

  • Part Number
    SiHB4N80E
  • Manufacturer
    Vishay
  • Description
    -30 to 30 V, 16 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    4.3 A
  • Drain Source Resistance
    1100 to 1270 Milliohm
  • Drain Source Breakdown Voltage
    800 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    16 nC
  • Power Dissipation
    69 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    D2PAK (TO-263)
  • Applications
    Server and telecom power supplies, Switch mode power supplies (SMPS), Power factor correction power supplies (PFC), Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting, Industrial - Welding - Motor drives - Battery chargers - Solar (P

Technical Documents
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