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SiHB8N50D

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SiHB8N50D Image

The SiHB8N50D from Vishay is a MOSFET with Continous Drain Current 8.7 A, Drain Source Resistance 700 to 850 Milliohm, Drain Source Breakdown Voltage 500 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3 to 5 V. Tags: Surface Mount. More details for SiHB8N50D can be seen below.

Product Specifications

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Product Details

  • Part Number
    SiHB8N50D
  • Manufacturer
    Vishay
  • Description
    -30 to 30 V, 15 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    8.7 A
  • Drain Source Resistance
    700 to 850 Milliohm
  • Drain Source Breakdown Voltage
    500 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3 to 5 V
  • Gate Charge
    15 nC
  • Power Dissipation
    156 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    D2PAK (TO-263)
  • Applications
    Consumer Electronics - Displays (LCD or Plasma TV), Server and Telecom Power Supplies - SMPS, Industrial - Welding - Induction Heating - Motor Drives, Battery Chargers

Technical Documents
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