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SiHD1K4N60E

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SiHD1K4N60E Image

The SiHD1K4N60E from Vishay is a MOSFET with Continous Drain Current 4.2 A, Drain Source Resistance 1300 to 1450 Milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3 to 5 V. Tags: Surface Mount. More details for SiHD1K4N60E can be seen below.

Product Specifications

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Product Details

  • Part Number
    SiHD1K4N60E
  • Manufacturer
    Vishay
  • Description
    -30 to 30 V, 5 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    4.2 A
  • Drain Source Resistance
    1300 to 1450 Milliohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3 to 5 V
  • Gate Charge
    5 nC
  • Power Dissipation
    63 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DPAK (TO-252)
  • Applications
    Server and telecom power supplies, Switch mode power supplies (SMPS), Power factor correction power supplies (PFC), Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting, Industrial - Welding - Motor drives - Battery chargers - Solar (P

Technical Documents
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