1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Vishay
  6. SiHF12N50C-E3

SiHF12N50C-E3

Download Datasheet Request Quote

Note : Your request will be directed to Vishay.

SiHF12N50C-E3 Image

The SiHF12N50C-E3 from Vishay is a MOSFET with Continous Drain Current 12 A, Drain Source Resistance 460 to 555 milliohm, Drain Source Breakdown Voltage 500 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3 to 5 V. Tags: Surface Mount. More details for SiHF12N50C-E3 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    SiHF12N50C-E3
  • Manufacturer
    Vishay
  • Description
    -30 to 30 V, 32 to 88 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    12 A
  • Drain Source Resistance
    460 to 555 milliohm
  • Drain Source Breakdown Voltage
    500 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3 to 5 V
  • Gate Charge
    32 to 88 nC
  • Power Dissipation
    208 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    D2PAK (TO-263)

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products