1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Vishay
  6. SiHG14N50D

SiHG14N50D

Download Datasheet Request Quote

Note : Your request will be directed to Vishay.

SiHG14N50D Image

The SiHG14N50D from Vishay is a MOSFET with Continous Drain Current 14 A, Drain Source Resistance 320 to 400 Milliohm, Drain Source Breakdown Voltage 500 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3 to 5 V. Tags: Through Hole. More details for SiHG14N50D can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    SiHG14N50D
  • Manufacturer
    Vishay
  • Description
    -30 to 30 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    14 A
  • Drain Source Resistance
    320 to 400 Milliohm
  • Drain Source Breakdown Voltage
    500 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3 to 5 V
  • Gate Charge
    29 nC
  • Power Dissipation
    208 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-247AC
  • Applications
    Consumer Electronics - Displays (LCD or Plasma TV), Server and Telecom Power Supplies - SMPS, Industrial - Welding, Induction Heating, Motor Drives, Battery Chargers

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products