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SiHG21N65EF

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The SiHG21N65EF from Vishay is a MOSFET with Continous Drain Current 21 A, Drain Source Resistance 150 to 180 Milliohm, Drain Source Breakdown Voltage 650 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for SiHG21N65EF can be seen below.

Product Specifications

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Product Details

  • Part Number
    SiHG21N65EF
  • Manufacturer
    Vishay
  • Description
    -30 to 30 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    21 A
  • Drain Source Resistance
    150 to 180 Milliohm
  • Drain Source Breakdown Voltage
    650 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    71 nC
  • Power Dissipation
    208 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-247AC
  • Applications
    Telecommunications - Server and telecom power supplies, Lighting - High intensity discharge (HID) - Light emitting diodes (LEDs), Consumer and computing - ATX power supplies, Industrial - Welding - Battery chargers, Renewable energy - Solar (PV inverters)

Technical Documents
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