1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Vishay
  6. SiHG47N60AE

SiHG47N60AE

Download Datasheet Request Quote

Note : Your request will be directed to Vishay.

SiHG47N60AE Image

The SiHG47N60AE from Vishay is a MOSFET with Continous Drain Current 43 A, Drain Source Resistance 56 to 65 Milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for SiHG47N60AE can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    SiHG47N60AE
  • Manufacturer
    Vishay
  • Description
    -30 to 30 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    43 A
  • Drain Source Resistance
    56 to 65 Milliohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    121 nC
  • Power Dissipation
    313 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-247AC
  • Applications
    Server and telecom power supplies, Switch mode power supplies (SMPS), Power factor correction power supplies (PFC), Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting, Industrial - Welding - Motor drives - Battery chargers - Solar (P

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products