The SiHG47N60AE from Vishay is a MOSFET with Continous Drain Current 43 A, Drain Source Resistance 56 to 65 Milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for SiHG47N60AE can be seen below.